Optical and electrical characterization of In-doped ZnMgO films grown by spray pyrolysis method

In‐doped Zn0.9Mg0.1O (0 ∼ 5 mol%) films on glass substrate were successfully grown by a spray pyrolysis method at 500 °C. The c‐axis orientation became weak with increasing indium concentration. This indicated that In‐doping caused the degree of crystallinity of the Zn0.9Mg0.1O films to decrease. Indium atoms could be acted as a donor type impurity because electrical conduction types in the undoped and In‐doped films indicated all n‐types and In‐doping caused the resistivity to decrease and carrier concentration to increase. Furthermore, In‐doping caused the number of nonradiative recombination centers to increase because photoluminescence intensity decreased with increasing indium concentration. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)