InGaN compositional patterning by ultraviolet photoexcitation during NH 3 ‐based MOMBE – A pathway to 3D epitaxy

Lateral compositional patterning of InGaN during NH 3 ‐based MOMBE by digital micromirror patterning of UV photoexcitation is demonstrated. Preferential desorption of In/In‐methyl species during InGaN surface exposure to an elliptically focused 5 kW Hg‐Xe arc lamp (λ = 365 nm) limits the incorporati...

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Veröffentlicht in:	Physica status solidi. C 2008-05, Vol.5 (6), p.1726-1729
Hauptverfasser:	Pritchett, D., Henderson, W., Billingsley, D., Doolittle, W. A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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