InGaN compositional patterning by ultraviolet photoexcitation during NH 3 ‐based MOMBE – A pathway to 3D epitaxy

Lateral compositional patterning of InGaN during NH 3 ‐based MOMBE by digital micromirror patterning of UV photoexcitation is demonstrated. Preferential desorption of In/In‐methyl species during InGaN surface exposure to an elliptically focused 5 kW Hg‐Xe arc lamp (λ = 365 nm) limits the incorporation of indium during growth. Localized photoexcitation results in the preferential In/In‐methyl desorption, resulting in indium mole fractions of 0.10 in unexposed regions to as low as 0 in fully exposed regions. The technique demonstrates promise for integration of micromirrors for dynamic and maskless selective epitaxy towards the realization of complex, 3D device structures. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)