Mosaic Structure and Optical Properties of III-Nitrides

An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band‐edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light‐emitting structures and the PL spectra of...

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Veröffentlicht in:Physica status solidi. C 2003 (1), p.558-562
Hauptverfasser: Shmidt, N.M., Aliev, G., Besyul'kin, A.N., Davies, J., Dunaevsky, M.S., Kolmakov, A.G., Loskutov, A.V., Lundin, W.V., Sakharov, A.V., Usikov, A.S., Wolverson, D., Zavarin, E.E.
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container_issue 1
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container_title Physica status solidi. C
container_volume
creator Shmidt, N.M.
Aliev, G.
Besyul'kin, A.N.
Davies, J.
Dunaevsky, M.S.
Kolmakov, A.G.
Loskutov, A.V.
Lundin, W.V.
Sakharov, A.V.
Usikov, A.S.
Wolverson, D.
Zavarin, E.E.
description An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band‐edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light‐emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.
doi_str_mv 10.1002/pssc.200390113
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subjects 61.72.-y
72.20.Ee
72.80.Ey
78.55.Cr
78.60.Fi
title Mosaic Structure and Optical Properties of III-Nitrides
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