Mosaic Structure and Optical Properties of III-Nitrides

An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band‐edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light‐emitting structures and the PL spectra of...

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Veröffentlicht in:	Physica status solidi. C 2003 (1), p.558-562
Hauptverfasser:	Shmidt, N.M., Aliev, G., Besyul'kin, A.N., Davies, J., Dunaevsky, M.S., Kolmakov, A.G., Loskutov, A.V., Lundin, W.V., Sakharov, A.V., Usikov, A.S., Wolverson, D., Zavarin, E.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.72.-y 72.20.Ee 72.80.Ey 78.55.Cr 78.60.Fi
Online-Zugang:	Volltext
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Zusammenfassung:	An influence of the degree of mosaic structure domain coalescence on photoluminescence (PL) properties (yellow band PL intensity and position of the band‐edge PL peak) is demonstrated. A detectable difference in electroluminescence spectra of InGaN/GaN light‐emitting structures and the PL spectra of GaN epilayers with different degree of order of the mosaic structure has been found. Possibilities of using the new approach based on the multifractal parameterisation to analyse mosaic structure properties is shown.
ISSN:	1610-1634 1610-1642
DOI:	10.1002/pssc.200390113