ZnSb and GaSb Bulk Amorphous Semiconductors: Transport Properties

Temperature dependencies of the conductivity and thermopower of bulk amorphous semiconducting alloys Zn41Sb59 and Ga100−xSbx with 47.5 < x < 55 were measured at 80 to 370 K and 120 to 370 K, respectively. The samples were prepared by solid state amorphization of the quenched high pressure phases occurring on heating at ambient pressure. The electrical properties of nonstoichiometric a‐Zn41Sb59 are well described by the conventional Mott‐Davis model. Those of both stoichiometric a‐GaSb and nonstoichiometric a‐Ga100−xSbx, appear to be more unusual and require a modification of the model.