Shubnikov‐de Haas Effect in (Cd 1−x−y Zn x Mn y ) 3 As 2 under Pressure

We have investigated the Shubnikov‐de Haas effect in single crystals of the group II‐V diluted magnetic semiconductors (Cd 1−x−y Zn x Mn y )AS 2 (x + y = 0.3, y = 0.06 and 0.08) at temperatures T = 4.2 to 16 K and magnetic fields B = 0 to 6.5 T under hydrostatic pressure p up to 14 kbar. Values of the cyclotron mass m c , the effective g‐factor g*, and the Dingle temperature T D have been determined. In both specimens a linear field dependence m c ( B ) = m + α B is observed, where m is independent of B but increases with pressure and where a does not depend on p and B . Additionally, pressure dependencies of g*, T D and the Hall mobility μ R are observed. The dependence of m and g*, on p is interpreted within the three‐band Kane model. The decrease of μ R and T D with increasing pressure is consistent with an increase of m .