Light Emission from Silicon Nanostructures Produced by Conventional Lithographic and Reactive Ion Etching Techniques

Sub‐ten nanometer diameter silicon pillars and silicon walls of the same thickness are fabricated by using conventional optical lithography based on deep‐UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties....

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Veröffentlicht in:Physica status solidi. B. Basic research 1995-07, Vol.190 (1), p.91-95
Hauptverfasser: Nassiopoulos, A. G., Grigoropoulos, S., Papadimitriou, D., Gocolides, E.
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Sprache:eng
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