Light Emission from Silicon Nanostructures Produced by Conventional Lithographic and Reactive Ion Etching Techniques

Light Emission from Silicon Nanostructures Produced by Conventional Lithographic and Reactive Ion Etching Techniques

Sub‐ten nanometer diameter silicon pillars and silicon walls of the same thickness are fabricated by using conventional optical lithography based on deep‐UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties....

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Veröffentlicht in:Physica status solidi. B. Basic research 1995-07, Vol.190 (1), p.91-95
Hauptverfasser: Nassiopoulos, A. G., Grigoropoulos, S., Papadimitriou, D., Gocolides, E.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other solid inorganic materials
Photoluminescence
Physics
Surface treatments
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Beschreibung
Zusammenfassung:Sub‐ten nanometer diameter silicon pillars and silicon walls of the same thickness are fabricated by using conventional optical lithography based on deep‐UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties. Visible photoluminescence with a peak in the range 580 to 650 nm is observed under Ar laser irradiation.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.2221900114