Energetic and temporal characteristics of picosecond pulse self-diffraction in silicon

Self‐induced diffraction of ultrashort pulses in silicon crystals at high incident light intensities is studied. A theoretical model is presented which takes into account the band‐filling effect as a major mechanism of light‐induced grating anharmonicity. Experimental results on the energetic and te...

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Veröffentlicht in:Physica status solidi. B. Basic research 1989-03, Vol.152 (1), p.347-355
Hauptverfasser: Apanasevich, P. A., Asimova, V. D., Zaporozhchenko, V. A., Zaporozhchenko, R. G., Pilipovich, I. V.
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container_end_page 355
container_issue 1
container_start_page 347
container_title Physica status solidi. B. Basic research
container_volume 152
creator Apanasevich, P. A.
Asimova, V. D.
Zaporozhchenko, V. A.
Zaporozhchenko, R. G.
Pilipovich, I. V.
description Self‐induced diffraction of ultrashort pulses in silicon crystals at high incident light intensities is studied. A theoretical model is presented which takes into account the band‐filling effect as a major mechanism of light‐induced grating anharmonicity. Experimental results on the energetic and temporal characteristics of four orders of diffraction are in good agreement with this theoretical model. [Russian Text Ignored].
doi_str_mv 10.1002/pssb.2221520138
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
title Energetic and temporal characteristics of picosecond pulse self-diffraction in silicon
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