$Energetic and temporal characteristics of picosecond pulse self-diffraction in silicon$

Energetic and temporal characteristics of picosecond pulse self-diffraction in silicon

Self‐induced diffraction of ultrashort pulses in silicon crystals at high incident light intensities is studied. A theoretical model is presented which takes into account the band‐filling effect as a major mechanism of light‐induced grating anharmonicity. Experimental results on the energetic and te...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physica status solidi. B. Basic research 1989-03, Vol.152 (1), p.347-355
Hauptverfasser:	Apanasevich, P. A., Asimova, V. D., Zaporozhchenko, V. A., Zaporozhchenko, R. G., Pilipovich, I. V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Self‐induced diffraction of ultrashort pulses in silicon crystals at high incident light intensities is studied. A theoretical model is presented which takes into account the band‐filling effect as a major mechanism of light‐induced grating anharmonicity. Experimental results on the energetic and temporal characteristics of four orders of diffraction are in good agreement with this theoretical model. [Russian Text Ignored].
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.2221520138