EPE and spin-flip Raman scattering in the n-type magnetically mixed semiconductors

Effects on the EPR and spin‐flip Raman scattering (SFRS) of large‐radius electron centers (donors) are considered for magnetically mixed semiconductors. The effects are caused by the mixing of the spin states of electrons and the localized spin momenta (LSM) of magnetic ions through the carrier‐ion exchange interaction. The shape of the SFRS and EPR spectra in the “Zeeman region” is calculated as well as the dependence of the relative component intensity on the matrix element ratio of SFRS (EPR) transitions for the donor electron and LSM. The effects of the “disappearance” of the donor EPR in the course of the magnetic doping of semiconductors and the effect of the manifestation of LSM EPR in the magnetic resonance optically detected from the donor‐acceptor luminescence are explained. A superscattering effect is predicted for the collective spin of the LSM ensemble effectively interacting with the donor electron. [Russian Text Ignored].