Electronic energy loss of channeled negative pions

The orientational dependence of energy loss for 70.5 MeV negative pions at planar channeling in Si crystals and the evolution of particle flux with crystal depth is investigated by computer simulation of particle trajectories and by using averaged potentials of atomic planes. It is shown that for sub‐barrier channeled particles the mean energy loss is significantly higher and for near‐barrier particles it is lower than under random scattering whereas for the above‐barrier particles the mean energy loss practically coincides with the random energy loss. The rate of meson dechanneling from the bound states with atomic planes is also determined. [Russian Text Ignored].