The plasma spectrum effect on acoustic wave amplification by carrier drift in semiconductors

The effect of plasma oscillations on acoustic wave amplification by carrier drift in semiconductors is discussed. A continuum theory is developed on the basis of hydrodynamical equations for the conduction electrons, the equations for the elastic vibrations of the crystal, and the Poisson equation. It is shown that if the plasma frequency ωp0 is much lower than the reciprocal value of the electron relaxation time for the scattering on phonons and impurities, τ−1, the results are in agreement with available calculations based on the equation for electrical conductivity and diffusion. However, in the case ωp0 τ ≫ 1 the amplification factor is multiplied by 2 ωpτ compared to the value predicted by those calculations, while the optimum drift velocity in this case is ωpτ times smaller. [Russian Text Ignored].