Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO 4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

ScAlMgO 4 (SAM) substrates have attracted significant attention as template substrates for fabricating bulk GaN crystals. Radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE) is preferred for the growth of the first GaN layer. However, the metastable zincblende (ZB) phase is mixed on the SAM substrate with a smaller terrace width, coupled with lower growth temperatures in MBE. Herein, the time evolution of GaN growth on SAM substrates is investigated to elucidate the mechanism underlying ZB mixing. ZB‐GaN is generated as stacking faults during the coalescence of the initially grown wurtzite‐ (WZ‐) GaN islands on adjacent SAM terraces, owing to the extraordinarily large step height close to three bilayers of WZ‐GaN. Therefore, high‐temperature growth on a SAM substrate with wider terraces suppresses the generation of the ZB phase in the initial growth stage. ZB‐GaN also decreases with an increase in the growth time. Based on these results, a 940 nm‐thick GaN layer is grown at 750 °C on the SAM substrate with a terrace width of 820 nm. A pure WZ‐GaN layer from the GaN/SAM interface with a flat surface with a root mean square value of below 1 nm and a dislocation density of 7.3 × 10 9 cm −2 is obtained.