Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics

In a previous study, GaN‐based nanopillars are grown vertically on a multicrystalline Si substrate by inserting (In)GaN steering crystals. In addition, blue‐green and white light‐emitting diodes (LEDs) are prepared on this substrate for the first time using a double heterotype p–n junction. Herein, the emission‐color distribution characteristics of this type of LED are analyzed in depth, and a related luminescence principle is proposed. Each nanopillar plus an electrode is considered a nanopillar LED, and the emission color of each nanopillar LED is inferred. The indium distribution in the InGaN active region is predicted based on the luminous color and corresponding spectra. Simultaneously, the morphology of related materials, electrical properties of LEDs, and chromaticity coordinates of luminous colors are analyzed and discussed. Gallium nitride‐based light‐emitting diodes (LEDs) based on multicrystalline silicon substrates are discussed in depth. The morphologies of related nanopillars are observed. The electrical and optical properties of the LEDs, especially the distribution and change of emission colors, are observed and analyzed. Luminescence principles are deduced based on the optical properties, and chromaticity values are calculated.