Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

The cover image shows a schematic illustration of atom probe tomography (APT) of Mg‐implanted GaN. Three arrows indicate the trajectories of field evaporated Ga, Mg, and N atoms from the surface of the tip‐shaped specimen (bottom left) to a position‐sensitive detector (top right). The 3D atom map of Mg implanted by sequential N‐implantation after ultra‐high‐pressure annealing is shown top left, and a corresponding scanning transmission electron microscope (STEM) image is displayed bottom right. Complementary APT/STEM analysis reveals the Mg segregation at defects in the GaN specimen. For further details, see article number 2200183 by Akira Uedono and co‐workers.