Spin Half‐Adder

A new proposal is given to design a spin half‐adder in a nanojunction. It is well known that at finite voltage a net circulating current (known as “circular current”) appears within a mesoscopic ring under the asymmetric ring‐to‐electrode interface configuration. This circular current induces a finite magnetic field at the center of the ring. Herein, this phenomenon is utilized to construct a spin half‐adder. The circular current–induced magnetic field is used to regulate the alignments of local free spins; by their orientations the output states of the “sum” and “carry” are specified. All the outputs are spin based; therefore, the results get atomically stored in the system. The experimental possibilities of the proposed model are also illustrated. A new proposal is given to design a nanoscale spin half‐adder along with memory operation, utilizing voltage‐induced circular current and magnetic field. The magnetic field is used to regulate the orientations of the output states of the “sum” (S) and “carry” (C). Using the same geometry, several other logical operations are also discussed.