Oxide‐Based Optoelectronics

Integrated Si photonics has the potential to revolutionize the processing of information between different integrated chips, as well as within a single chip itself. By performing at least a part of the task with photons rather than electrons, new opportunities for broad‐band low‐power communication and computing are created. Herein, the theoretical description of the linear electro‐optic (EO), or Pockels, effect and a newly elucidated design rule for materials evaluation is summarized. Possible applications of Si‐integrated optical elements based on perovskite oxides and their heterostructures are also discussed. In particular, the Pockels effect in BaTiO3 films grown on Si and intersubband transitions in Si‐integrated perovskite quantum wells (QWs) is described. This article discusses possible applications of Si‐integrated optical elements based on perovskite oxides and their heterostructures. After briefly introducing the integration of perovskite on Si and linear electro‐optic (EO) effect, the use of BaTiO3 in EO modulators and intersubband transitions in perovskite quantum wells is discussed. These materials offer advantages and opportunities for broad‐band low‐power communication and computing.