Dielectric Dispersion at the Mn/ZnPc Interfaces

Herein, the effects of manganese transparent (150 nm) substrates on the structural, nonlinear optical, and dielectric properties of zinc phthalocyanine are explored. ZnPc thin films are observed to exhibit deformed crystal structure associated with remarkable enhancement in the light absorbability by 21 times at 2.62 eV and by 173 times in the near‐infrared (NIR) region of light upon replacement of glass by transparent Mn substrates. The Mn layer also causes a redshift in the energy bandgap, allows generation of free carrier absorption process and increases the dielectric constant by more than 169% in the NIR region. The interaction between the manganese substrates with the organic ZnPc thin layers decreases the free holes density, widens the plasmon frequency range, and improves the drift mobility of holes. The nonlinear dielectric response with the highly improved light absorbability in the NIR range of light nominates the Mn/ZnPc thin films for optoelectronic applications. The effects of transparent manganese substrates on the structural, optical, dielectric, and optical‐conductivity parameters of ZnPC thin films are reported. The Mn substrates of thicknesses of 150 nm are able to enhance the light absorbability by 170 times, increase the dielectric constant values by 169%, decrease the hole density, and increase the drift mobility in the near‐infrared range of light.