Equilibrium Morphologies of Faceted GaN under the Metalorganic Vapor‐Phase Epitaxy Condition: Wulff Construction Using Absolute Surface Energies

An equilibrium Wulff construction using absolute surface energies for various orientations is conducted to elucidate the morphology change of GaN under the metalorganic vapor‐phase epitaxy (MOVPE) condition. The calculated equilibrium shapes suggest that the morphology mainly consists of {11¯01} and {11¯00} facets under Ga‐rich condition for selective area growth (SAG) on [ 11¯00 ] lateral direction. In contrast, an equilibrium crystal shape including the larger area of {11¯01} facets and (0001) plateau with smaller {11¯00} facets emerges under N‐rich condition. Furthermore, by incorporating growth conditions such as growth temperature and carrier gas, it is found that the (0001) plateau hardly emerges under H2 carrier gas condition at low temperature. The results under H2 carrier gas are found to be different from those under N2 carrier gas where the (0001) plateau slightly emerges at low temperature. The calculated results manifest that our approach can provide the determination of equilibrium shape of semiconductor materials during epitaxial growth. Equilibrium crystal shapes for slective area growth on [1–100] lateral direction are theoretically composed on the basis of Wulff construction using absolute surface energies under metalorganic vapor‐phase epitaxy growth conditions. The area of (0001) plateau for N2 carrier gas is found to be larger than that for H2 carrier gas at a high growth temperature.