Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties

The carrier transport properties of a multilayer graphene with the turbostratic stacking structure are evaluated by transfer characteristics in a field‐effect transistor and Hall‐effect measurement with van der Pauw geometry. Herein, the multilayer graphene with the turbostratic stacking structure is synthesized by graphene overlayer growth on a monolayer graphene template using a chemical vapor deposition method. The sheet resistance of the inner layer in the grown multilayer graphene is lower than that of the monolayer graphene used as a growth template. This is caused by a screening effect due to the multistacking. Moreover, the value of carrier mobility in the grown multilayer graphene is higher than that of the monolayer graphene template. The enhancement of carrier mobility is caused by a turbostratic stacking effect where the band structure of the multilayer graphene is similar to that of the monolayer graphene. These results indicate that the synthesis technique of the multilayer graphene with the turbostratic stacking structure using the graphene template is effective to improve the carrier transport properties in the multilayer graphene sheet. The carrier transport properties of a turbostratic multilayer graphene are evaluated. The values of the conductance and carrier mobility in the multilayer graphene are higher than those of the monolayer graphene. The enhancement of electrical performance is explained by a screening effect of the charged impurities on the device due to the multistacking.