Comparison of Doping Levels of Single‐Walled Carbon Nanotubes Synthesized by Arc‐Discharge and Chemical Vapor Deposition Methods by Encapsulated Silver Chloride

In this paper, we have performed the filling of single‐walled carbon nanotubes (SWCNTs) with mean diameters of 1.4 and 1.9 nm synthesized by the arc‐discharge and chemical vapor deposition (CVD) methods, respectively, with silver chloride. The doping effect of the encapsulated compound on SWCNTs is studied by Raman spectroscopy and X‐ray photoelectron spectroscopy. It is shown that the filling of nanotubes with silver chloride leads to p‐doping of SWCNTs accompanied by charge transfer from the SWCNTs to the salt and downshift of their Fermi level. It is found that the filling of SWCNTs synthesized by different methods results in different doping levels of nanotubes. The arc‐discharge 1.4 nm‐diameter SWCNTs have larger doping level than CVD 1.9 nm‐diameter nanotubes. The obtained information about the influence of the filler on the electronic properties of SWCNTs synthesized by different methods is elemental for applications of nanotubes in nanoelectronic devices. Kharlamova et al. perform the filling of single‐walled carbon nanotubes (SWCNTs) synthesized by the arc‐discharge and chemical vapor deposition methods with silver chloride. The electronic properties of the filled nanotubes are characterized by Raman spectroscopy and X‐ray photoelectron spectoscopy. The authors reveal different doping levels of SWCNTs synthesized by the different methods.