On the band gap of indium nitride

The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct‐gap II–VI and III–V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showin...

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Veröffentlicht in:	Physica status solidi. B. Basic research 2003-06, Vol.237 (2), p.R1-R2
1. Verfasser:	Nag, B. R.
Format:	Artikel
Sprache:	eng
Schlagworte:	71.20.Nr 78.20.Bh 78.55.Cr Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Physics Semiconductor compounds
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Zusammenfassung:	The controversy about the band gap of indium nitride is discussed. It is shown by considering the electron effective mass in different direct‐gap II–VI and III–V semiconducting compounds that the controversy may be resolved by measuring the electron effective mass in indium antimonide samples showing a band gap of 0.7 eV.
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200301823