Band offset of quantum wells computed from charge measurements

Band discontinuity is an important parameter for the design of heterojunction based electronic and opto electronic devices. An alternative method for band offset measurement in quantum wells has been outlined in this paper. The band offset is determined from a comparison of experimental results and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physica status solidi. B. Basic research 2003-03, Vol.236 (1), p.55-60
Hauptverfasser:	Biswas, Dipankar, Chakrabarti, Satyajit, Dasgupta, Sudipto, Kundu, Sudakshina, Datta, Resmi
Format:	Artikel
Sprache:	eng
Schlagworte:	73.40.Kp 73.63.Hs Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics Quantum wells
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Band discontinuity is an important parameter for the design of heterojunction based electronic and opto electronic devices. An alternative method for band offset measurement in quantum wells has been outlined in this paper. The band offset is determined from a comparison of experimental results and theoretical computations of the temperature dependent total charge content of a quantum well. In spite of the simplicity of the measurement procedures the result at its best has an error around ±2%.
ISSN:	0370-1972 1521-3951
DOI:	10.1002/pssb.200301504