Modulation of Near Infrared Radiation by Acoustoelectric Domains in n-Type GaAs at Room Temperature

Optical experiments have enabled measurements of the absorption coefficient of n‐type GaAs to be made at room temperature near the absorption edge by an acoustoelectric domain located at the anode. Moreover, the shape of the domain can be deduced and in addition the acoustic flux is shown to be an important factor in the variations of the absorption coefficient. Some results are also given of local resistivity variations in n‐type GaAs by the injection of free carriers when a GaAs laser beam is focused on the sample.