Carrier Recombination in Nickel Doped Germanium from Lifetime and Noise Measurements
A study is made in order to precise the transition processes for free carriers between the bands and the well‐controlled deep Ni levels in Ge from 100 to 350 °K. The experimental work involves measurements of the lifetime of the photoconductive decay and the generation‐recombination noise.
Gespeichert in:
| Veröffentlicht in: | physica status solidi (b) 1967, Vol.21 (2), p.619-626 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A study is made in order to precise the transition processes for free carriers between the bands and the well‐controlled deep Ni levels in Ge from 100 to 350 °K. The experimental work involves measurements of the lifetime of the photoconductive decay and the generation‐recombination noise. |
|---|---|
| ISSN: | 0370-1972 1521-3951 |
| DOI: | 10.1002/pssb.19670210220 |