A Discrete Defect Created during the Phosphorus Diffusion of High Voltage Planar Si Thyristors

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1992-08, Vol.132 (2), p.K109-K112
Hauptverfasser:	Storch, W., Mohr, U., Elstner, L., Leihkauf, R.
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Sprache:	ger
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creator	Storch, W. Mohr, U. Elstner, L. Leihkauf, R.
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title	A Discrete Defect Created during the Phosphorus Diffusion of High Voltage Planar Si Thyristors
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