Activation of the implanted impurity and transformation of radiation defects in oxidized silicon under RF plasma treatment

Modification of P+‐implanted silicon layers under rf plasma treatment and thermal annealing is investigated using photoluminescence and electrical methods. It is shown that compared to thermal annealing rf plasma treatment leads to phosphorus activation at lower temperatures and to more effective an...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1992-03, Vol.130 (1), p.45-51
Hauptverfasser:	Ya. VALAKH, M., Lysenko, V. S., Nazarov, A. N., Yu. RUDKO, G., Shakhraychuk, N. I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
Online-Zugang:	Volltext
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