Activation of the implanted impurity and transformation of radiation defects in oxidized silicon under RF plasma treatment

Modification of P+‐implanted silicon layers under rf plasma treatment and thermal annealing is investigated using photoluminescence and electrical methods. It is shown that compared to thermal annealing rf plasma treatment leads to phosphorus activation at lower temperatures and to more effective annealing of deep levels of radiation defects. On the other hand rf treatment has no advantages over the annealing of the radiation defects observed by photoluminescence methods. Russian text ignored