The current characteristics of p-i-n and p+-i-p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

An investigation is made of p—i—n and p+—i—p+ structures of hydrogenated amorphous silicon with various contents of monosilane (SiH4) mixed with argon. The short‐circuit current (Isc) and open‐circuit voltage (Uoc) in dependence on the illumination level at various temperatures of a p—i—n solar cell, as well as the dark space‐charge‐limited current in the p+—i—p+ structure, are experimentally investigated. It is ascertained that the Isc(Uoc) characteristic contains one exponential region in the case of a lean mixture (4% SiH4), and two exponential regions in the case of a rich mixture (almost 100% SiH4). The mechanism causing the formation of the regions is discussed and the factors of diode non‐ideality and dark current density as functions of temperature, the dark conductivity activation energies, the series and incremental resistances of a p—i—n junction, the carrier trapping factor, and the equilibrium concentration of holes in the i‐layer of a p+—i—p+ structure are determined. [Russian Text Ignored].