Electrical effects associated with the ordering process in CdInGaS4 crystals. II. Electron traps determined with conductivity measurements
The electron trap distribution between 0.8 to 0.6 eV under the conduction band minimum of the ordered phase in the layered compound CdInGaS4 is determined by I–U and I‐1000/T measurements. Disordered crystals of this compound seem to have an inhomogeneous trap distribution, as indicated by I–U‐ and...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1985-11, Vol.92 (1), p.231-235 |
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| container_title | Physica status solidi. A, Applied research |
| container_volume | 92 |
| creator | Anagnostopoulos, A. N. Manolikas, C. Karoutjs, A. |
| description | The electron trap distribution between 0.8 to 0.6 eV under the conduction band minimum of the ordered phase in the layered compound CdInGaS4 is determined by I–U and I‐1000/T measurements. Disordered crystals of this compound seem to have an inhomogeneous trap distribution, as indicated by I–U‐ and I‐1000/T measurements.
Die Elektronenhaftstellenverteilung zwischen 0,8 und 0,6 eV unterhalb des Leitungsbandminimums der geordneten Phase der Schichtstruktur CdInGaS4 wird mittels I–U‐ und I‐1000/T‐Messungen bestimmt. Fehlgeordnete Kristalle dieser Verbindung scheinen eine inhomogene Haftstellenverteilung zu besitzen, wie die I–U‐ und I‐1000/T‐Messungen zeigen. |
| doi_str_mv | 10.1002/pssa.2210920122 |
| format | Article |
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Die Elektronenhaftstellenverteilung zwischen 0,8 und 0,6 eV unterhalb des Leitungsbandminimums der geordneten Phase der Schichtstruktur CdInGaS4 wird mittels I–U‐ und I‐1000/T‐Messungen bestimmt. Fehlgeordnete Kristalle dieser Verbindung scheinen eine inhomogene Haftstellenverteilung zu besitzen, wie die I–U‐ und I‐1000/T‐Messungen zeigen.</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.2210920122</identifier><identifier>CODEN: PSSABA</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>Charge carriers: generation, recombination, lifetime, and trapping ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Exact sciences and technology ; Physics</subject><ispartof>Physica status solidi. A, Applied research, 1985-11, Vol.92 (1), p.231-235</ispartof><rights>Copyright © 1985 WILEY‐VCH Verlag GmbH & Co. KGaA</rights><rights>1986 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2732-b012915f9972ed03106dac9350b6e267045a4f3da187cee8a2baf3c64ad4cdb03</citedby><cites>FETCH-LOGICAL-c2732-b012915f9972ed03106dac9350b6e267045a4f3da187cee8a2baf3c64ad4cdb03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.2210920122$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.2210920122$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8804704$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Anagnostopoulos, A. N.</creatorcontrib><creatorcontrib>Manolikas, C.</creatorcontrib><creatorcontrib>Karoutjs, A.</creatorcontrib><title>Electrical effects associated with the ordering process in CdInGaS4 crystals. II. Electron traps determined with conductivity measurements</title><title>Physica status solidi. A, Applied research</title><addtitle>phys. stat. sol. (a)</addtitle><description>The electron trap distribution between 0.8 to 0.6 eV under the conduction band minimum of the ordered phase in the layered compound CdInGaS4 is determined by I–U and I‐1000/T measurements. Disordered crystals of this compound seem to have an inhomogeneous trap distribution, as indicated by I–U‐ and I‐1000/T measurements.
Die Elektronenhaftstellenverteilung zwischen 0,8 und 0,6 eV unterhalb des Leitungsbandminimums der geordneten Phase der Schichtstruktur CdInGaS4 wird mittels I–U‐ und I‐1000/T‐Messungen bestimmt. Fehlgeordnete Kristalle dieser Verbindung scheinen eine inhomogene Haftstellenverteilung zu besitzen, wie die I–U‐ und I‐1000/T‐Messungen zeigen.</description><subject>Charge carriers: generation, recombination, lifetime, and trapping</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqFkE1vEzEQhi0EEqHtmasPXDcd2_spTiUqaaTSoqYIbtbEnqWmye7K49LmL_Cr2WqhFSdOM4d5nlfzCvFWwVwB6OOBGedaK2g0KK1fiJkqtMpMU357KWYARmV1UxavxRvmHwCQQwUz8et0Sy7F4HArqW3HnSUy9y5gIi_vQ7qR6YZkHz3F0H2XQ-wdMcvQyYVfdUtc59LFPSfc8lyuVnM5GftOpogDS0-J4i50f22u7_ydS-FnSHu5I-S7SDvqEh-KV-0ooaM_80B8-Xh6vTjLzi-Xq8XJeeZ0ZXS2Gb9rVNE2TaXJj29B6dE1poBNSbqsIC8wb41HVVeOqEa9wda4MkefO78BcyCOJ6-LPXOk1g4x7DDurQL7WKV9rNI-VzkS7yZiQB6LaiN2LvATVteQj7Hj2fvp7D5saf8_q_28Xp_8E5JNdOBED080xltbVqYq7NeLpb26-FBU5bWyn8xv6GmX7g</recordid><startdate>19851116</startdate><enddate>19851116</enddate><creator>Anagnostopoulos, A. N.</creator><creator>Manolikas, C.</creator><creator>Karoutjs, A.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley-VCH</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19851116</creationdate><title>Electrical effects associated with the ordering process in CdInGaS4 crystals. II. Electron traps determined with conductivity measurements</title><author>Anagnostopoulos, A. N. ; Manolikas, C. ; Karoutjs, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2732-b012915f9972ed03106dac9350b6e267045a4f3da187cee8a2baf3c64ad4cdb03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Charge carriers: generation, recombination, lifetime, and trapping</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Anagnostopoulos, A. N.</creatorcontrib><creatorcontrib>Manolikas, C.</creatorcontrib><creatorcontrib>Karoutjs, A.</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Anagnostopoulos, A. N.</au><au>Manolikas, C.</au><au>Karoutjs, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical effects associated with the ordering process in CdInGaS4 crystals. II. Electron traps determined with conductivity measurements</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1985-11-16</date><risdate>1985</risdate><volume>92</volume><issue>1</issue><spage>231</spage><epage>235</epage><pages>231-235</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><abstract>The electron trap distribution between 0.8 to 0.6 eV under the conduction band minimum of the ordered phase in the layered compound CdInGaS4 is determined by I–U and I‐1000/T measurements. Disordered crystals of this compound seem to have an inhomogeneous trap distribution, as indicated by I–U‐ and I‐1000/T measurements.
Die Elektronenhaftstellenverteilung zwischen 0,8 und 0,6 eV unterhalb des Leitungsbandminimums der geordneten Phase der Schichtstruktur CdInGaS4 wird mittels I–U‐ und I‐1000/T‐Messungen bestimmt. Fehlgeordnete Kristalle dieser Verbindung scheinen eine inhomogene Haftstellenverteilung zu besitzen, wie die I–U‐ und I‐1000/T‐Messungen zeigen.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2210920122</doi><tpages>5</tpages></addata></record> |
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| ispartof | Physica status solidi. A, Applied research, 1985-11, Vol.92 (1), p.231-235 |
| issn | 0031-8965 1521-396X |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssa_2210920122 |
| source | Wiley Online Library - AutoHoldings Journals |
| subjects | Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics |
| title | Electrical effects associated with the ordering process in CdInGaS4 crystals. II. Electron traps determined with conductivity measurements |
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