Study of charge accumulation kinetics in MOS structures with intrinsic anodic oxide on InSb by measuring transient photocurrents

Steady‐state and transient photocurrents in MOS structures with intrinsic anodic oxide on InSb are investigated in a broad spectral range. The energetic diagram for the structure and mechanism of the intrinsic conductivity of the anodic oxide is specified by studying steady‐state photocurrents in more detail. A relationship between the transient photocurrent and the accumulation and discharging of dielectric traps is found. These data are consistently interpreted in terms of the proposed model of intrinsic photoconductivity of anodic oxide. [Russian Text Ignored].