The Influence of Thermal Treatment on Thermally Stimulated Depolarization Spectrum of the Electret State in Plastically Deformed Silicon

Investigations are made of thermostimulated depolarization (TSD) spectra of electret state in plastically deformed silicon crystals and in dislocated p‐n junctions formed as a result of local plastic deformation. Centers with activation energies of 0.18, 0.22, 0.27 eV as well as a number of unresolved levels in the energy interval 0.31 to 0.45 eV are observed. The effect of thermal treatment on the TSD spectra is studied. It is shown that the increase of deformation temperature to 1150 °C results in a partial restoration of the electrical activity of dislocations which is thought to vanish monotonically with increasing deformation temperature. An aging effect a t ambient temperatures on TSD spectra is found in highly dislocated silicon. The results obtained are discussed in terms of a model which takes into account dislocat, ion‐point defect interaction. [Russian Text Ignored].