The effect of heat treatment on compensated CZ silicon

Thermally induced donors in Czochralski‐grown p‐Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. [Russian Text Ignored].

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 1984-04, Vol.82 (2), p.533-536
Hauptverfasser: Baranskii, P. I., Babich, V. M., Baran, N. P., Bugay, A. A., Dotsenko, Yu. P., Kovalchuk, V. B.
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Sprache:eng
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Zusammenfassung:Thermally induced donors in Czochralski‐grown p‐Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. [Russian Text Ignored].
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.2210820225