Investigation of phase transformations and polytype stability of ß-SiC

The kinetics of silicon carbide synthesis plays an important part in the formation of polytypes during the growth of crystals and epitaxial layers. The results obtained permit to develop a technique of plotting kinetic phase diagrams with the polytypes shown for silicon carbide. In particular, these phase diagrams accomodate quite well the conditions of production (rather high growth rates at comparatively low temperatures of growing) of crystals and epitaxial layers of β‐SiC from solutions in silicon melts and at decomposition in hydrogen of methyl‐trichlorosilane and other silicon‐and carbon‐containing organic compounds. [Russian text Ignored.]