Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures
The main peculiarities of light‐induced long‐time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi‐insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above‐m...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1976-07, Vol.36 (1), p.53-60 |
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| container_end_page | 60 |
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| container_issue | 1 |
| container_start_page | 53 |
| container_title | Physica status solidi. A, Applied research |
| container_volume | 36 |
| creator | Vul, A. Ya Nabiev, Sh. I. Petrosyan, S. G. Shik, A. Ya |
| description | The main peculiarities of light‐induced long‐time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi‐insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above‐mentioned system and in naturally‐inhomogeneous semiconductor is proved both theoretically and experimentally.
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| doi_str_mv | 10.1002/pssa.2210360105 |
| format | Article |
| fullrecord | <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pssa_2210360105</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_Q256PJRD_H</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3295-b6104f64c54a66d0ebba8f092d999b527e83043511ab57cdd5a699ac6c5fcfff3</originalsourceid><addsrcrecordid>eNqFkDtPwzAURi0EEuUxs3qEIe11HDu1mFB5FFTxKgg2y3FsMKRxZafQ_HtSFYGYGK7u_aTv3OEgdECgTwDSwTxG1U9TApQDAbaBeoSlJKGCP2-iHgAlyVBwto12YnwDgAxy6CE_dbNFpRrna-wtbl4Nrnz9ksxNcL7E2tflQjfuwzUtDqZSy3X1cDK6P8LzV1P7WTc1djUu_aKoTFKp1gQczcx9w75LTeiORTBxD21ZVUWz_7130eP52cNonExuLi5HJ5NE01SwpOAEMsszzTLFeQmmKNTQgkhLIUTB0twMKWSUEaIKluuyZIoLoTTXzGprLd1Fg_VfHXyMwVg5D26mQisJyJUvufIlf311xPGa-HSVaf-ry9vp9OQPnaxpFxuz_KFVeJc8pzmTT9cX8i5l_Pbq_lSO6Re3PoJc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures</title><source>Wiley Online Library All Journals</source><creator>Vul, A. Ya ; Nabiev, Sh. I. ; Petrosyan, S. G. ; Shik, A. Ya</creator><creatorcontrib>Vul, A. Ya ; Nabiev, Sh. I. ; Petrosyan, S. G. ; Shik, A. Ya</creatorcontrib><description>The main peculiarities of light‐induced long‐time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi‐insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above‐mentioned system and in naturally‐inhomogeneous semiconductor is proved both theoretically and experimentally.
[Russian Text Ignored]</description><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>DOI: 10.1002/pssa.2210360105</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><ispartof>Physica status solidi. A, Applied research, 1976-07, Vol.36 (1), p.53-60</ispartof><rights>Copyright © 1976 WILEY‐VCH Verlag GmbH & Co. KGaA</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3295-b6104f64c54a66d0ebba8f092d999b527e83043511ab57cdd5a699ac6c5fcfff3</citedby><cites>FETCH-LOGICAL-c3295-b6104f64c54a66d0ebba8f092d999b527e83043511ab57cdd5a699ac6c5fcfff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.2210360105$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.2210360105$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Vul, A. Ya</creatorcontrib><creatorcontrib>Nabiev, Sh. I.</creatorcontrib><creatorcontrib>Petrosyan, S. G.</creatorcontrib><creatorcontrib>Shik, A. Ya</creatorcontrib><title>Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures</title><title>Physica status solidi. A, Applied research</title><addtitle>phys. stat. sol. (a)</addtitle><description>The main peculiarities of light‐induced long‐time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi‐insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above‐mentioned system and in naturally‐inhomogeneous semiconductor is proved both theoretically and experimentally.
[Russian Text Ignored]</description><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1976</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPwzAURi0EEuUxs3qEIe11HDu1mFB5FFTxKgg2y3FsMKRxZafQ_HtSFYGYGK7u_aTv3OEgdECgTwDSwTxG1U9TApQDAbaBeoSlJKGCP2-iHgAlyVBwto12YnwDgAxy6CE_dbNFpRrna-wtbl4Nrnz9ksxNcL7E2tflQjfuwzUtDqZSy3X1cDK6P8LzV1P7WTc1djUu_aKoTFKp1gQczcx9w75LTeiORTBxD21ZVUWz_7130eP52cNonExuLi5HJ5NE01SwpOAEMsszzTLFeQmmKNTQgkhLIUTB0twMKWSUEaIKluuyZIoLoTTXzGprLd1Fg_VfHXyMwVg5D26mQisJyJUvufIlf311xPGa-HSVaf-ry9vp9OQPnaxpFxuz_KFVeJc8pzmTT9cX8i5l_Pbq_lSO6Re3PoJc</recordid><startdate>19760716</startdate><enddate>19760716</enddate><creator>Vul, A. Ya</creator><creator>Nabiev, Sh. I.</creator><creator>Petrosyan, S. G.</creator><creator>Shik, A. Ya</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19760716</creationdate><title>Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures</title><author>Vul, A. Ya ; Nabiev, Sh. I. ; Petrosyan, S. G. ; Shik, A. Ya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3295-b6104f64c54a66d0ebba8f092d999b527e83043511ab57cdd5a699ac6c5fcfff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1976</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Vul, A. Ya</creatorcontrib><creatorcontrib>Nabiev, Sh. I.</creatorcontrib><creatorcontrib>Petrosyan, S. G.</creatorcontrib><creatorcontrib>Shik, A. Ya</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applied research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vul, A. Ya</au><au>Nabiev, Sh. I.</au><au>Petrosyan, S. G.</au><au>Shik, A. Ya</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures</atitle><jtitle>Physica status solidi. A, Applied research</jtitle><addtitle>phys. stat. sol. (a)</addtitle><date>1976-07-16</date><risdate>1976</risdate><volume>36</volume><issue>1</issue><spage>53</spage><epage>60</epage><pages>53-60</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><abstract>The main peculiarities of light‐induced long‐time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi‐insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above‐mentioned system and in naturally‐inhomogeneous semiconductor is proved both theoretically and experimentally.
[Russian Text Ignored]</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.2210360105</doi><tpages>8</tpages></addata></record> |
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| ispartof | Physica status solidi. A, Applied research, 1976-07, Vol.36 (1), p.53-60 |
| issn | 0031-8965 1521-396X |
| language | eng |
| recordid | cdi_crossref_primary_10_1002_pssa_2210360105 |
| source | Wiley Online Library All Journals |
| title | Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T13%3A20%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Simulation%20of%20the%20long-period%20conductivity%20relaxation%20(LCR)%20phenomenon%20in%20double-layer%20semiconductor%20structures&rft.jtitle=Physica%20status%20solidi.%20A,%20Applied%20research&rft.au=Vul,%20A.%20Ya&rft.date=1976-07-16&rft.volume=36&rft.issue=1&rft.spage=53&rft.epage=60&rft.pages=53-60&rft.issn=0031-8965&rft.eissn=1521-396X&rft_id=info:doi/10.1002/pssa.2210360105&rft_dat=%3Cistex_cross%3Eark_67375_WNG_Q256PJRD_H%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |