Simulation of the long-period conductivity relaxation (LCR) phenomenon in double-layer semiconductor structures

The main peculiarities of light‐induced long‐time conductivity relaxations (persistent conductivity) are simulated on a structure representing the GaAs epitaxial film on the semi‐insulating substrate of the same material. The similarity of the photoconductivity characteristic features in the above‐mentioned system and in naturally‐inhomogeneous semiconductor is proved both theoretically and experimentally. [Russian Text Ignored]