Growth and characterization of silicon ribbons produced by a capillary action shaping technique

Silicon ribbons 0.5 mm in thickness were grown by a capillary action shaping technique using graphite capillary dies. Ribbons up to 1.3 m in length and 12 mm in width were obtained. Crystallographic ribbon perfection was studied through X‐ray topography. MOS structures were used to measure minority...

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Veröffentlicht in:	Physica status solidi. A, Applied research Applied research, 1975-01, Vol.27 (1), p.231-241
Hauptverfasser:	Ciszek, T. F., Schwuttke, G. H.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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