A doped highly compensated crystal semiconductor as a model of amorphous semiconductors
The model of a large‐scale potential relief is used to explain the most striking effects typical for the amorphous semiconductor, the switching and the memory. The potential relief was produced experimentally in a classical crystal semiconductor, n‐germanium, by compensation with fast neutrons. This...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1973-04, Vol.16 (2), p.515-526 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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