Theory of laser generation threshold in homogeneous semiconductors with exponential band tail
A theory of the generation threshold involving tail—band transitions in a homogeneous semiconductor has been constructed assuming an exponential density of states in the tail. The threshold pumping value Pthr. is obtained. This value increases exponentially with temperature. For a sufficiently large...
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| Veröffentlicht in: | Physica status solidi. A, Applied research Applied research, 1972-01, Vol.9 (1), p.59-67 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A theory of the generation threshold involving tail—band transitions in a homogeneous semiconductor has been constructed assuming an exponential density of states in the tail. The threshold pumping value Pthr. is obtained. This value increases exponentially with temperature. For a sufficiently large number of majority carriers, Pthr. weakly increases with this number.
[Russian text Ignored]. |
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| ISSN: | 0031-8965 1521-396X |
| DOI: | 10.1002/pssa.2210090105 |