Influence of Thermal Shock on ZnO Film Related to Si/ZnO Interface

Influence of thermal shock on Si‐based ZnO film related to Si/ZnO interface is studied through experiments and simulations. ZnO films are deposited onto silicon wafers by radio frequency magnetron sputtering, the models near Si/ZnO interface are constructed, and the evolution of photoelectric properties after different thermal shocks is investigated herein. The results show that thermal shock can improve optical properties of Si‐based ZnO film in the wavelength range of 300–500 nm; the structures of and form at the Si/ZnO interface under thermal shock, but the structures associated with Si/ZnO interface are unstable after thermal shock. The influence of thermal shock on optical properties of Si‐based ZnO films is revealed, which can be used to understand and guide the design of Si/ZnO‐based optical devices.