Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz

Herein, a 3.5 GHz (S‐band) power performance is reported on an AlGaN/GaN high‐electron‐mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by high‐temperature metal–organic chemical vapor deposition. The fabricated devices with a 400 nm gate and direct current an...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2023-08, Vol.220 (16), p.n/a
Hauptverfasser: Kim, Minho, Choi, Uiho, Kim, Keono, Heo, Yunseok, Lee, Kyeongjae, Lee, Sangmin, Nam, Okhyun
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Sprache:eng
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Zusammenfassung:Herein, a 3.5 GHz (S‐band) power performance is reported on an AlGaN/GaN high‐electron‐mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by high‐temperature metal–organic chemical vapor deposition. The fabricated devices with a 400 nm gate and direct current and radio‐frequency (RF) characteristics are examined. These device shows a transconductance of 233 mS mm−1 and a maximum drain current of 820 mA mm−1. The pulsed current–voltage (I–V) characteristic shows a low slump ratio with a 0.36% and 2.2% for Z1 and Z2, respectively. The power performance shows output power = 5.5 W mm−1 with 54.3% power added efficiency, and VDS was 50 V. The potential of an AlN buffer HEMT is demonstrated by the results for use in next‐generation high‐power RF devices. Herein, the power performance of an AlGaN/GaN high‐electron‐mobility transistor (HEMT) with AlN buffer on SiC substrate, grown by high‐temperature metal–organic chemical vapor deposition, is presented. The fabricated devices are examined and show positive characteristics, such as low slump ratio and breakdown voltage. The potential of using an AlN buffer HEMT is demonstrated by the results for use in high‐power radio‐frequency devices of the future.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202200826