Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux

Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2022-03, Vol.219 (6)
Hauptverfasser: Jmerik, Valentin, Nechaev, Dmitrii, Yagovkina, Maria, Sitnikova, Alla, Troshkov, Sergey, Rzheutski, Mikalai, Lutsenko, Eugenii, Rouvimov, Sergei
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 6
container_start_page
container_title Physica status solidi. A, Applications and materials science
container_volume 219
creator Jmerik, Valentin
Nechaev, Dmitrii
Yagovkina, Maria
Sitnikova, Alla
Troshkov, Sergey
Rzheutski, Mikalai
Lutsenko, Eugenii
Rouvimov, Sergei
description
doi_str_mv 10.1002/pssa.202100550
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1002_pssa_202100550</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1002_pssa_202100550</sourcerecordid><originalsourceid>FETCH-LOGICAL-c840-73ad925bfe12d210aeb36dad55f8b97524f683d513a06f0cbda90762f0bcf3473</originalsourceid><addsrcrecordid>eNo9kUFP2zAUxyM0JBjsyvkd2aHhOYmT9rBD10FBagFt7By9xHbxlNqRnY721iPcpvEN-xn4ADgCcbD9nmz93k_-R9EJw5ghJmet9xQnmISGc9yLDtkwTwZ5ykafPmrEg-iz938QM54V7DB6mVtjG9pIt9v--0lmIWFil631utPWUANzK1YN9Y0HbWDcwBqmBGz3-D9U13Aa9t326VtYGOe77TPGBf8Ksx7pYersg4HfXpsF3DbklxTGjL3XvpMisBtZB7qD75KWcN7qjtYbWBkhHcxlb6Tr-yBkhH4zeNDdPZCBG6XC7USaTroA-tUGwyD7I3Cdrlb9Y7AKxnWn_1I_6lp3zi6kgYtmtT6O9hU1Xn55P4-iu4vzu8nlYHYzvZqMZ4N6mOGgSEmMEl4pyRIRfpVkleaCBOdqWI0KnmQqH6aCs5QwV1hXgkZY5InCqlZpVqRHUfyGrZ313klVtk4vyW1KhmUfWdlHVn5Elr4C1uGUnA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux</title><source>Wiley Online Library All Journals</source><creator>Jmerik, Valentin ; Nechaev, Dmitrii ; Yagovkina, Maria ; Sitnikova, Alla ; Troshkov, Sergey ; Rzheutski, Mikalai ; Lutsenko, Eugenii ; Rouvimov, Sergei</creator><creatorcontrib>Jmerik, Valentin ; Nechaev, Dmitrii ; Yagovkina, Maria ; Sitnikova, Alla ; Troshkov, Sergey ; Rzheutski, Mikalai ; Lutsenko, Eugenii ; Rouvimov, Sergei</creatorcontrib><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.202100550</identifier><language>eng</language><ispartof>Physica status solidi. A, Applications and materials science, 2022-03, Vol.219 (6)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c840-73ad925bfe12d210aeb36dad55f8b97524f683d513a06f0cbda90762f0bcf3473</citedby><cites>FETCH-LOGICAL-c840-73ad925bfe12d210aeb36dad55f8b97524f683d513a06f0cbda90762f0bcf3473</cites><orcidid>0000-0001-8759-7273</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Jmerik, Valentin</creatorcontrib><creatorcontrib>Nechaev, Dmitrii</creatorcontrib><creatorcontrib>Yagovkina, Maria</creatorcontrib><creatorcontrib>Sitnikova, Alla</creatorcontrib><creatorcontrib>Troshkov, Sergey</creatorcontrib><creatorcontrib>Rzheutski, Mikalai</creatorcontrib><creatorcontrib>Lutsenko, Eugenii</creatorcontrib><creatorcontrib>Rouvimov, Sergei</creatorcontrib><title>Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux</title><title>Physica status solidi. A, Applications and materials science</title><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNo9kUFP2zAUxyM0JBjsyvkd2aHhOYmT9rBD10FBagFt7By9xHbxlNqRnY721iPcpvEN-xn4ADgCcbD9nmz93k_-R9EJw5ghJmet9xQnmISGc9yLDtkwTwZ5ykafPmrEg-iz938QM54V7DB6mVtjG9pIt9v--0lmIWFil631utPWUANzK1YN9Y0HbWDcwBqmBGz3-D9U13Aa9t326VtYGOe77TPGBf8Ksx7pYersg4HfXpsF3DbklxTGjL3XvpMisBtZB7qD75KWcN7qjtYbWBkhHcxlb6Tr-yBkhH4zeNDdPZCBG6XC7USaTroA-tUGwyD7I3Cdrlb9Y7AKxnWn_1I_6lp3zi6kgYtmtT6O9hU1Xn55P4-iu4vzu8nlYHYzvZqMZ4N6mOGgSEmMEl4pyRIRfpVkleaCBOdqWI0KnmQqH6aCs5QwV1hXgkZY5InCqlZpVqRHUfyGrZ313klVtk4vyW1KhmUfWdlHVn5Elr4C1uGUnA</recordid><startdate>202203</startdate><enddate>202203</enddate><creator>Jmerik, Valentin</creator><creator>Nechaev, Dmitrii</creator><creator>Yagovkina, Maria</creator><creator>Sitnikova, Alla</creator><creator>Troshkov, Sergey</creator><creator>Rzheutski, Mikalai</creator><creator>Lutsenko, Eugenii</creator><creator>Rouvimov, Sergei</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-8759-7273</orcidid></search><sort><creationdate>202203</creationdate><title>Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux</title><author>Jmerik, Valentin ; Nechaev, Dmitrii ; Yagovkina, Maria ; Sitnikova, Alla ; Troshkov, Sergey ; Rzheutski, Mikalai ; Lutsenko, Eugenii ; Rouvimov, Sergei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c840-73ad925bfe12d210aeb36dad55f8b97524f683d513a06f0cbda90762f0bcf3473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jmerik, Valentin</creatorcontrib><creatorcontrib>Nechaev, Dmitrii</creatorcontrib><creatorcontrib>Yagovkina, Maria</creatorcontrib><creatorcontrib>Sitnikova, Alla</creatorcontrib><creatorcontrib>Troshkov, Sergey</creatorcontrib><creatorcontrib>Rzheutski, Mikalai</creatorcontrib><creatorcontrib>Lutsenko, Eugenii</creatorcontrib><creatorcontrib>Rouvimov, Sergei</creatorcontrib><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jmerik, Valentin</au><au>Nechaev, Dmitrii</au><au>Yagovkina, Maria</au><au>Sitnikova, Alla</au><au>Troshkov, Sergey</au><au>Rzheutski, Mikalai</au><au>Lutsenko, Eugenii</au><au>Rouvimov, Sergei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><date>2022-03</date><risdate>2022</risdate><volume>219</volume><issue>6</issue><issn>1862-6300</issn><eissn>1862-6319</eissn><doi>10.1002/pssa.202100550</doi><orcidid>https://orcid.org/0000-0001-8759-7273</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 1862-6300
ispartof Physica status solidi. A, Applications and materials science, 2022-03, Vol.219 (6)
issn 1862-6300
1862-6319
language eng
recordid cdi_crossref_primary_10_1002_pssa_202100550
source Wiley Online Library All Journals
title Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x  = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T19%3A38%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Monolayer%E2%80%90Range%20Compositional%20Modulations%20in%20Al%20x%20Ga%201%E2%88%92%20x%20N%20(%20x%20%E2%80%89=%E2%80%890.6%E2%80%930.75)%20Layers%20Grown%20Using%20Plasma%E2%80%90Assisted%20Molecular%20Beam%20Epitaxy%20under%20Me%E2%80%90Rich%20Conditions%20with%20an%20Off%E2%80%90Centered%20Spatial%20Distribution%20of%20Activated%20Nitrogen%20Flux&rft.jtitle=Physica%20status%20solidi.%20A,%20Applications%20and%20materials%20science&rft.au=Jmerik,%20Valentin&rft.date=2022-03&rft.volume=219&rft.issue=6&rft.issn=1862-6300&rft.eissn=1862-6319&rft_id=info:doi/10.1002/pssa.202100550&rft_dat=%3Ccrossref%3E10_1002_pssa_202100550%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true