Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)
Thin Films Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexio...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2019-01, Vol.216 (2), p.n/a |
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| container_title | Physica status solidi. A, Applications and materials science |
| container_volume | 216 |
| creator | Sandu, Cosmin Silviu Parsapour, Fazel Mertin, Stefan Pashchenko, Vladimir Matloub, Ramin LaGrange, Thomas Heinz, Bernd Muralt, Paul |
| description | Thin Films
Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexion layer. Secondary nucleation from the latter leads to the growth of heavily tilted, faster growing wurtzite grains. More details can be found in article number 1800569 by Cosmin Silviu Sandu, Paul Muralt and co‐workers. |
| doi_str_mv | 10.1002/pssa.201970015 |
| format | Article |
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Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexion layer. Secondary nucleation from the latter leads to the growth of heavily tilted, faster growing wurtzite grains. More details can be found in article number 1800569 by Cosmin Silviu Sandu, Paul Muralt and co‐workers.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201970015</identifier><language>eng</language><ispartof>Physica status solidi. A, Applications and materials science, 2019-01, Vol.216 (2), p.n/a</ispartof><rights>2019 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1745-e3b1b8da6f6b8b141e3cb2b1bf51b9df8ebd61203cb0acfeff4f564a7e085f713</citedby><orcidid>0000-0002-1301-3762</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201970015$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201970015$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Sandu, Cosmin Silviu</creatorcontrib><creatorcontrib>Parsapour, Fazel</creatorcontrib><creatorcontrib>Mertin, Stefan</creatorcontrib><creatorcontrib>Pashchenko, Vladimir</creatorcontrib><creatorcontrib>Matloub, Ramin</creatorcontrib><creatorcontrib>LaGrange, Thomas</creatorcontrib><creatorcontrib>Heinz, Bernd</creatorcontrib><creatorcontrib>Muralt, Paul</creatorcontrib><title>Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)</title><title>Physica status solidi. A, Applications and materials science</title><description>Thin Films
Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexion layer. Secondary nucleation from the latter leads to the growth of heavily tilted, faster growing wurtzite grains. More details can be found in article number 1800569 by Cosmin Silviu Sandu, Paul Muralt and co‐workers.</description><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkL9OwzAQxi0EEqWwMnuEIcGX_xmjiJZKFVRKmSM7sVUjp6lsVyU7Ay_AC_IkOCoqI8vdT9_ddzp9CN0C8YGQ4GFnDPUDAnlKCMRnaAJZEnhJCPn5iQm5RFfGvBESxVEKE_RRsG2vO6rwXFO5dbU_2A12VKiqecbrjcOZVJ3Bi227b3iL2YDLvtsp_i57NxvddiRqcakHY6lS0nK3brkWtOEG3602g_FxZandG1z1SrYSFzj4_vwa_72_RheCKsNvfvsUvc4e1-WTt3yZL8pi6TWQRrHHQwYsa2kiEpYxiICHDQucJmJgeSsyztoEAuJUQhvBhYhEnEQ05SSLRQrhFPnHu43ujdFc1DstO6qHGkg9ZliPGdanDJ0hPxoOUvHhn-16VVXFn_cHubJ4NA</recordid><startdate>20190123</startdate><enddate>20190123</enddate><creator>Sandu, Cosmin Silviu</creator><creator>Parsapour, Fazel</creator><creator>Mertin, Stefan</creator><creator>Pashchenko, Vladimir</creator><creator>Matloub, Ramin</creator><creator>LaGrange, Thomas</creator><creator>Heinz, Bernd</creator><creator>Muralt, Paul</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-1301-3762</orcidid></search><sort><creationdate>20190123</creationdate><title>Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)</title><author>Sandu, Cosmin Silviu ; Parsapour, Fazel ; Mertin, Stefan ; Pashchenko, Vladimir ; Matloub, Ramin ; LaGrange, Thomas ; Heinz, Bernd ; Muralt, Paul</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1745-e3b1b8da6f6b8b141e3cb2b1bf51b9df8ebd61203cb0acfeff4f564a7e085f713</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sandu, Cosmin Silviu</creatorcontrib><creatorcontrib>Parsapour, Fazel</creatorcontrib><creatorcontrib>Mertin, Stefan</creatorcontrib><creatorcontrib>Pashchenko, Vladimir</creatorcontrib><creatorcontrib>Matloub, Ramin</creatorcontrib><creatorcontrib>LaGrange, Thomas</creatorcontrib><creatorcontrib>Heinz, Bernd</creatorcontrib><creatorcontrib>Muralt, Paul</creatorcontrib><collection>CrossRef</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sandu, Cosmin Silviu</au><au>Parsapour, Fazel</au><au>Mertin, Stefan</au><au>Pashchenko, Vladimir</au><au>Matloub, Ramin</au><au>LaGrange, Thomas</au><au>Heinz, Bernd</au><au>Muralt, Paul</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><date>2019-01-23</date><risdate>2019</risdate><volume>216</volume><issue>2</issue><epage>n/a</epage><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>Thin Films
Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexion layer. Secondary nucleation from the latter leads to the growth of heavily tilted, faster growing wurtzite grains. More details can be found in article number 1800569 by Cosmin Silviu Sandu, Paul Muralt and co‐workers.</abstract><doi>10.1002/pssa.201970015</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-1301-3762</orcidid><oa>free_for_read</oa></addata></record> |
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| title | Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019) |
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