Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces (Phys. Status Solidi A 2∕2019)

Thin Films Characterization with hyper‐map STEM‐EDX and automated crystal orientation mapping prove that the growth and proliferation of abnormally oriented grains in (0001)‐oriented AlScN films initiate by the segregation of Sc atoms (red in the map) to grain boundaries, forming a Sc rich complexion layer. Secondary nucleation from the latter leads to the growth of heavily tilted, faster growing wurtzite grains. More details can be found in article number 1800569 by Cosmin Silviu Sandu, Paul Muralt and co‐workers.