A compact quantum statistical model for the ballistic nanoscale MOSFETs

We develop an analytical quantum statistical model for nanoscale metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). The model describes transport both in the scattering‐limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green&#...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2011-07, Vol.208 (7), p.1726-1732
Hauptverfasser:	Varpula, A., Lebedeva, N., Kuivalainen, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences ballistic transport Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Green's functions Integrated circuits Molecular electronics, nanoelectronics MOSFET quantum transport Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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