A compact quantum statistical model for the ballistic nanoscale MOSFETs

We develop an analytical quantum statistical model for nanoscale metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). The model describes transport both in the scattering‐limited and ballistic regimes. The expression for the channel current is derived with the Keldysh nonequilibrium Green's function technique. The obtained quantum statistical current expression reduces to the semiclassical one in the absence of scattering. The model indicates that in nanoscale devices the scattering processes become dependent on the bias voltages. The calculated results for the I–V characteristics are in good agreement with the experimental results in the case of a 70 nm MOSFET. The model includes a minimal number of fitting parameters and it can be used in the design of ultra large‐scale integrated circuits.