Defect structure in Zn+ implanted Si: HRXRD study

The defect structure of the layer damaged by implantation with 64Zn+ ions and its evolution during subsequent annealing was studied by high‐resolution X‐ray diffraction combined with secondary ion mass spectrometry and Auger electron spectroscopy methods. The samples were pieces of n‐type Si(001) wafer cut from a Czohralski grown ingot. The samples were implanted with 64Zn+ ions at an energy of 100 keV and an ion dose of 2 × 1014 cm−2 with subsequent annealing at 400 °C for 60 min and 700 °C for 10 min. The strain and Debye–Waller depth profiles determined from the diffraction patterns were analyzed and compared to Zn profiles. Annealing leads to significant changes in the shape of the profiles. These changes can be caused by annihilation of Frenkel pair components, redistribution of both radiation‐induced point defects and the implanted impurity, and quasi‐chemical reactions between point defects and implanted impurity. Analysis of Si(‐2‐24) reciprocal space maps confirms that the damaged layer remains fully coherent to the Si matrix in as‐implanted state and after the heat treatments. The increase of X‐ray diffuse scattering intensity after annealing is caused by clustering of radiation‐induced point defects and implanted Zn atoms.