The current status of ultraviolet laser diodes

We report on nitride laser diode lasing at short ultraviolet wavelengths. We first present room temperature operations of GaN/AlGaN multiple‐quantum‐well (MQW) laser diodes under pulsed current mode. Then we report on the results of thorough investigation of the device characteristics. The optical a...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2011-07, Vol.208 (7), p.1586-1589
Hauptverfasser:	Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, Uchiyama, Kazuya, Kan, Hirofumi
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN Exact sciences and technology Fundamental areas of phenomenology (including applications) laser diodes Laser materials Lasers nitrides Optical materials Optics Physics semiconductor lasers Semiconductor lasers laser diodes ultraviolet
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Zusammenfassung:	We report on nitride laser diode lasing at short ultraviolet wavelengths. We first present room temperature operations of GaN/AlGaN multiple‐quantum‐well (MQW) laser diodes under pulsed current mode. Then we report on the results of thorough investigation of the device characteristics. The optical and temperature characteristics as well as the carrier recombination of the devices have been investigated. We lastly present the first demonstration of indium‐free nitride laser diode. The laser operation of the AlGaN MQW laser diodes open the door to laser operation at shorter ultraviolet wavelengths.
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.201000870